Electrical and optical control of single spins integrated in scalable semiconductor devices

Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems.

Source: ScienceNOW - December 4, 2019 Category: Science Authors: Anderson, C. P., Bourassa, A., Miao, K. C., Wolfowicz, G., Mintun, P. J., Crook, A. L., Abe, H., Ul Hassan, J., Son, N. T., Ohshima, T., Awschalom, D. D. Tags: Physics, Applied, Materials Science r-articles Source Type: news