The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures

Publication date: 1 June 2021Source: Materials Science in Semiconductor Processing, Volume 127Author(s): Karolina Pągowska, Maciej Kozubal, Andrzej Taube, Renata Kruszka, Maciej Kamiński, Norbert Kwietniewski, Marcin Juchniewicz, Anna Szerling
Source: Materials Science in Semiconductor Processing - Category: Materials Science Source Type: research