Silicon-compatible Mg2Si/Si n-p photodiodes with high room temperature infrared responsivity
Publication date: 1 November 2019Source: Materials Science in Semiconductor Processing, Volume 102Author(s): Ahmed A.M. El-Amir, Takeo Ohsawa, Satoshi Ishii, Masataka Imura, Meiyong Liao, Xiuwei Fu, Hiroyo Segawa, Isao Sakaguchi, Tadaaki Nagao, Kiyoshi Shimamura, Naoki OhashiAbstractFor the full benefit of the silicon chip industry and to further extend the photoresponse cut-off wavelength of the current Si photodetectors beyond 1100 nm, high-performance silicon-compatible Mg2Si/Si n-p photodiodes are constructed on the bulk silicon wafer by magnetron sputtering and post-annealing sequential processes. The results show t...
Source: Materials Science in Semiconductor Processing - June 24, 2019 Category: Materials Science Source Type: research

Editorial Board
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): (Source: Materials Science in Semiconductor Processing)
Source: Materials Science in Semiconductor Processing - June 23, 2019 Category: Materials Science Source Type: research

Investigation of the stepped split protection gate L-Trench SOI LDMOS with ultra-low specific on-resistance by simulation
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Lijuan Wu, Ye Huang, Yiqing Wu, Lin Zhu, Bing LeiAbstractAn ultra-low specific on-resistance SOI LDMOS with stepped split protection gate L-trench (SSG LT LDMOS) is proposed. On the one hand, the stepped split protection gate (PG) not only assists in depleting the drift region but also modulates the vertical electric field. In addition, the PG diminishes the Miller capacitance, which decreasing gate-drain charge (Qgd) and switching losses of the proposed structure. On the other hand, the breakdown voltage (BV) of the p...
Source: Materials Science in Semiconductor Processing - June 23, 2019 Category: Materials Science Source Type: research

Unraveling the strength interaction in a TiO2-Graphene photocatalytic nanocomposite synthesized by the microwave hydrothermal method
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): C. Martínez-Sánchez, F. Montiel-González, E. Díaz-Cervantes, V. Rodríguez-GonzálezAbstractGraphene oxide (GO) based composites were synthesized using a hydrothermal process, by these means, it was possible to tailor the loading of titanate nanotubes (TNTs) and TiO2 anatase particles in order to get insights into the photoactivity of the as-prepared photocatalyst. GO was prepared by the modified Hummers' method. The interactions stuck between titanium nanostructures and GO were ...
Source: Materials Science in Semiconductor Processing - June 20, 2019 Category: Materials Science Source Type: research

Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): J. Laifi, C. Saidi, N. Chaaben, A. Bchetnia, Y. El Gmili, J.P. SalvestriniAbstractThe role of the TMG flow rate on the properties of the GaN layer grown by MOVPE on (001) and (11n)/n=2,3 GaAs substrates were investigated. The surface morphology, crystalline quality and optical property were found to be strongly dependent on the TMG flow rate. As the latter decreased to 16 μmol/min, in-situ reflectance measurements showed a constant signal. This is attributed to the enhanced coalescence process, which resulted in the...
Source: Materials Science in Semiconductor Processing - June 20, 2019 Category: Materials Science Source Type: research

Synthesis and structural, electrical, optical properties of Lu3+-doped ZnO nanorods
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Hakan Çolak, Ercan KaraköseAbstractUndoped and Lu3+ (in the range of 0–5 mol %) doped ZnO nanorods were investigated in this study. The obtained ZnO samples were analyzed crystallographically by the x-ray diffraction (XRD) method. From the XRD patterns, it was determined that each structure was crystallized in the (002) direction and the unit cell parameters a and c increased with the doping amount of Lu3+. The electrical conductivities of the ZnO samples were measured by a four-point dc system in t...
Source: Materials Science in Semiconductor Processing - June 18, 2019 Category: Materials Science Source Type: research

Efficient vapor-liquid-solid synthesis of copper doped zinc oxide (Cu:ZnO) nanonails with highly homogeneous dopant distribution
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Ozlem Altintas YildirimAbstractCopper doped zinc oxide (Cu:ZnO) nanonails with uniformly distributed Cu ions through the nail structure were synthesized via a vapor-liquid-solid technique using seed Cu:ZnO nanoparticles. The seed nanoparticles were prepared with a simple precipitation method. The structure and morphology of nanonails and the distribution of Cu ions were investigated using X-ray diffraction, electron energy loss spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and...
Source: Materials Science in Semiconductor Processing - June 18, 2019 Category: Materials Science Source Type: research

Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Sankalp Kumar Singh, Ramesh Kumar Kakkerla, H. Bijo Joseph, Ankur Gupta, Deepak Anandan, Venkatesan Nagarajan, Hung Wei Yu, D. John Thiruvadigal, Edward Yi ChangAbstractThe performance of InAs/GaSb core-shell nanowire TFET is systematically investigated for the effects of intrinsic device parameters such as channel doping, shell thickness, spacer length and source offset. Device ON-current (ION) was chosen as the key figure of merit. It is found that ION improves due to improved electrostatic control achieved by the TF...
Source: Materials Science in Semiconductor Processing - June 18, 2019 Category: Materials Science Source Type: research

Chemically vaporized cobalt incorporated wurtzite as photoanodes for efficient photoelectrochemical water splitting
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Humaira Rashid Khan, Muhammad Aamir, Mohammad Azad Malik, Asif Ali Tahir, Bilal Akram, Ghulam Murtaza, Muhammad Aziz Choudhary, Javeed AkhtarAbstractThe development of low-cost, durable and efficient photocatalyst for overall photoelectrochemical water splitting is in demand to overcome the renewable energy crises. Herein, we demonstrate the efficient photoelectrochemical water splitting by cobalt (Co) incorporated zinc oxide (Zn1-xCoxO) thin films deposited via aerosol assisted chemical vapour deposition (AACVD) techn...
Source: Materials Science in Semiconductor Processing - June 17, 2019 Category: Materials Science Source Type: research

Design of capacitance based on interdigitated electrode for BioMEMS sensor application
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): S. Sathya, S. Muruganand, N. Manikandan, K. KaruppasamyAbstractIn this paper present, an electrostatic actuation mechanism based on the interdigitated electrode for the Biomedical Micro Electro Mechanical Systems (Bio-MEMS) sensors was mainly used for sensing or actuation in analytical and different detection applications. One of the main things interdigitated electrode (IDE) for capacitance derived from multiple electrode pairs has been connected in parallel with wide proof mass, folded spring beam attached as anchor ...
Source: Materials Science in Semiconductor Processing - June 15, 2019 Category: Materials Science Source Type: research

Acetone sensor based on WO3 nanocrystallines with oxygen defects for low concentration detection
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Jing Lu, Can Xu, Long Cheng, Na Jia, Jianfeng Huang, Cuiyan LiAbstractIn this work, the monoclinic and hexagonal phase of WO3 nanocrystallines are prepared by a facile one-pot microwave assisted hydrothermal method. The obtained WO3 are fabricated as gas sensors to detect acetone vapor. The microstructure and sensing performances of different WO3 phases are studied comparatively. The results show that the precursor pH value affects precipitation of H2WO4 and subsequently decomposition of H2WO4 to WO3. Hydrochloric acid...
Source: Materials Science in Semiconductor Processing - June 15, 2019 Category: Materials Science Source Type: research

Electrochemical sensing and photocatalytic degradation of methylene blue (MB) dye by cobalt-beta hydroxy benzoate complex
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): S. Sangeetha, G. Krishnamurthy, M. Srinidhi RaghavanAbstractIn this work describes the cobalt-beta hydroxyl benzoate (Co-bhb), Cobalt based complex has been synthesized by solvothermal method and verified for the application detection and removal of environmentally hazardous molecule like methylene blue. The Co-bhb sample were characterized by various techniques like FTIR, PXRD, MS-Mass analysis, NMR, and SEM, EDX, ES-TEM,XPS, PL and BET surface area measurement. The Co-bhb/cp electrode was prepared and electrochemical...
Source: Materials Science in Semiconductor Processing - June 14, 2019 Category: Materials Science Source Type: research

Superior electrochemical water oxidation of novel NiS@FeS2 nanocomposites
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): B. Jansi Rani, P. Aiswarya Kanjana, G. Ravi, R. Yuvakkumar, B. SaravanakumarAbstractNiS, FeS2 and NiS@FeS2 nanocomposites were optimally synthesized by employing solvothermal method. Prepared nanocomposites were confirmed by X-ray diffraction spectra (XRD) by obtaining strong diffraction correspond to rhombohedral and orthorhombic phase of NiS and FeS2 respectively. A well defined Raman active mode of vibrations obtained around 337, 477 and 543 cm−1 revealed for NiS@FeS2 nanocomposites. Metal sulphide vibration...
Source: Materials Science in Semiconductor Processing - June 14, 2019 Category: Materials Science Source Type: research

Grinding-assistant synthesis to basic bismuth nitrates and their photocatalytic properties
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Mengyun Zheng, Qiaofeng Han, Xuemei Jia, Junwu ZhuAbstractBasic bismuth nitrates, Bi6O6(OH)2(NO3)4·2H2O and Bi6O5(OH)3(NO3)5·3H2O (respectively denoted as BiON-4N and BiON-5N), were easily synthesized by a grinding-assistant room temperature reaction route through carefully tuning NaOH amounts. The plate-like BiON-5N prepared at NaOH/Bi molar ratio of 2.13 (marked as BiON-5N-2.13; pH ≈ 2.11) exhibited excellent photocatalytic activity for malachite green (MG) and methylene violet (MV) degradatio...
Source: Materials Science in Semiconductor Processing - June 14, 2019 Category: Materials Science Source Type: research

Spray coating assisted solution-processed fabrication of phosphorus doped nanocrystalline silicon thin films: Micro-structure evolution, optical and electrical properties
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Ankit Goyal, P.R. SoniAbstractIn view of development of cost effective solution-processed Si based devices, a facile synthesis method using spray coating technique is proposed in this study. The thin films of phosphorus doped nanocrystalline Si powder were fabricated by spraying of the doped Si powder on the quartz glass substrate. For spraying, the powder was dispersed in acetone and sprayed, by an air spray gun, on the substrate. The sprayed film was then sintered at 700° C for 90 min in argon gas atmosphere. C...
Source: Materials Science in Semiconductor Processing - June 14, 2019 Category: Materials Science Source Type: research

Fabrication of Au-decorated SnO2 nanoparticles with enhanced n-buthanol gas sensing properties
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Xiaoxue Lian, Yan Li, Junwu Zhu, Yunling Zou, Dongmin An, Qiong WangAbstractStannic oxide nanoparticles with the different Au decorating contents are prepared by a simple hydrothermal method in this paper. The products are characterized by X-ray diffraction (XRD), energy dispersive spectrum (EDS), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The XRD patterns reveal that all the products are tetragonal phase of rutile SnO2 crystal structure. The gas-sensing performance of the Au-decorat...
Source: Materials Science in Semiconductor Processing - June 14, 2019 Category: Materials Science Source Type: research

High-performance texturization of multicrystalline silicon wafer by HF/HNO3/H2O system incorporated with MnO2 particles
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Huan Liu, Lei Zhao, Hongwei Diao, Wenjing WangAbstractManganese dioxide (MnO2) particles were incorporated into the traditional wet acid etching (HF/HNO3/H2O) system to improve the texturization performance of multicrystalline silicon (mc-Si) wafers. Low surface reflectance (R) was obtained on both the slurry wire sawn (SWS) mc-Si and the diamond wire sawn (DWS) mc-Si. By studying the effects of the MnO2 usage amount and the reaction time on the average thickness reduction, the texture morphology and R of the textured ...
Source: Materials Science in Semiconductor Processing - June 11, 2019 Category: Materials Science Source Type: research

Octahedral Cu2O nanoparticles decorated by silver catalyst for high sensitivity nonenzymatic H2O2 detection
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Feng-Renn Juang, Wen-Cherng ChernAbstractOctahedral cuprous oxide nanoparticles decorated with silver particles for hydrogen peroxide (H2O2) detecting applications were studied in detail. The silver particles are applied as a catalyst to enhance sensing ability. Different technologies including ultraviolet-assisted, temperature-assisted, and vibration-assisted methods were used. Among these technologies, the electrode synthesized with ultraviolet-assisted one can achieve the largest quantity of silver particles with th...
Source: Materials Science in Semiconductor Processing - June 11, 2019 Category: Materials Science Source Type: research

Effect of Na doping on photoluminescence and laser stimulated nonlinear optical features of ZnO nanostructures
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): U.G. Deekshitha, Krithika Upadhya, Albin Antony, Aninamol Ani, M. Nowak, I.V. Kityk, J. Jedryka, P. Poornesh, K.B. Manjunatha, Suresh D. kulkarniAbstractIn this work, nonlinear optical properties of Na: ZnO thin films (Na: ZnO) have been experimentally elaborated. The principal possibility to operate the nonlinear optical features using external laser beams is shown. The Na: ZnO films were synthesized by spray pyrolysis technique at a deposition temperature equal to about 400 °C. XRD graph reveals that the grown ...
Source: Materials Science in Semiconductor Processing - June 8, 2019 Category: Materials Science Source Type: research

Editorial Board
Publication date: September 2019Source: Materials Science in Semiconductor Processing, Volume 100Author(s): (Source: Materials Science in Semiconductor Processing)
Source: Materials Science in Semiconductor Processing - June 7, 2019 Category: Materials Science Source Type: research

Atomic layer deposition and annealing of Ga doped ZnO films
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Zoltán Szabó, János Volk, Zsolt Endre Horváth, Zsófia Medveczky, Zsolt Czigány, Kálmán Vad, Zsófia BajiAbstractGa doped ZnO films were deposited at low temperature with atomic layer deposition at different temperatures with the novel precursor, hexakis (dimethylamino)gallium. The ZnO films prepared at 300 °C on GaN substrates are epitaxial, but the Ga doping deteriorates the crystallinity: the doped films are oriented polycrystalline. The films deposi...
Source: Materials Science in Semiconductor Processing - June 7, 2019 Category: Materials Science Source Type: research

Boosting visible light photocatalytic and antibacterial performance by decoration of silver on magnetic spindle-like bismuth ferrite
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Zeeshan Haider Jaffari, Sze-Mun Lam, Jin-Chung Sin, Honghu ZengAbstractVisible light-activated Ag-doped spindle-like BiFeO3 (Ag-BFO) magnetic nanocomposite using different Ag loadings was synthesized via hydrothermal synthesis methods. The structural, morphological, optical and magnetic properties of as-prepared nanocomposite was analyzed by various characterization techniques. Field emission scanning electron microscopy images revealed the distribution of metallic Ag on the surface of spindle-like BFO with the widths ...
Source: Materials Science in Semiconductor Processing - June 7, 2019 Category: Materials Science Source Type: research

Oxygen partial pressure-dependent growth mechanism of low-dimensional zinc oxide on indium tin oxide glass
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Rungroj Tuayjaroen, Tanattha Rattana, Tula JutarosagaAbstractThe influence of O2 partial pressure on the growth mechanism of quasi-one-dimensional thermal-evaporated ZnO structure was explained by the preferential interface nucleation. At the relatively low temperature of 550 °C, the growth was governed by different growth mechanisms as the O2 partial pressure increased. At a very low O2 partial pressure of 0.3 Pa, the growth of ZnO nanowire on indium-tin oxide glass was Au-catalyzed vapor-liquid-solid (VLS) me...
Source: Materials Science in Semiconductor Processing - June 7, 2019 Category: Materials Science Source Type: research

Facile synthesis of Au/CdS core-shell nanocomposites using laser ablation technique
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Alina C. Kuriakose, V.P.N. Nampoori, Sheenu ThomasAbstractMetallic nanoparticles within a semiconductor have the potential for many important optoelectronic applications. Here we report a strategy for the synthesis of Au-CdS core-shell structure using laser assisted method. We performed laser ablation of bulk gold within the colloidal CdS solution which resulted in the formation of the Au core with an average particle size of 8.8 nm surrounded by a shell coating of CdS with average diameter 5.8 nm. The average size...
Source: Materials Science in Semiconductor Processing - June 7, 2019 Category: Materials Science Source Type: research

Self-reduction combined with photo-deposition decorating Au nanoparticles on urchin-like WO2.72 for enhancement of trimethylamine-sensing performance
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Yaru Shang, Yongping Cui, Ruixia Shi, Aiyu Zhang, Yingzi Wang, Ping YangAbstractHierarchical urchin-like WO2.72 microspheres decorated by uniform Au nanoparticles were synthesized via a two-step deposition process. The two-step deposition process, including weak reduction deposition and photo-deposition, ensures uniform size and well-dispersed Au nanoparticles. The gas-sensing properties of WO2.72 and Au/WO2.72 for trimethylamine (TMA) were investigated. The results show that Au/WO2.72 has more outstanding gas-sensing ...
Source: Materials Science in Semiconductor Processing - June 7, 2019 Category: Materials Science Source Type: research

Sulfurizing Sputtered-ZnO as buffer layer for cadmium-free Cu2ZnSnS4 solar cells
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Shuai Yang, Shurong Wang, Hua Liao, Xin Xu, Zhen Tang, Xinyu Li, Xiang Li, Tingbao Wang, Di LiuAbstractIn this work, Cadmium-free Zn(O,S) buffer layers were prepared by sulfurizing sputtered-ZnO films. The impacts of different annealing atmosphere and sulfurization temperatures on the properties of Zn(O,S) films were investigated. The sputtered-ZnO films were annealed at 150 °C for 30min under the air and oxygen gas atmosphere, and following sulfurized at 200 °C, 260 °C and 320 °C for 50min unde...
Source: Materials Science in Semiconductor Processing - June 5, 2019 Category: Materials Science Source Type: research

Influence of Fe doping on structural, physicochemical and biological properties of CdSe nanoparticles
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): D.V. Sridevi, E. Sundaravadivel, P. KanagarajAbstractWe synthesized pure and Fe doped CdSe nanoparticles (NPs) (Fe@CdSe NPs) with different dopant concentrations 5%, 10%, 15% using mercaptoethanol (ME) as a capping agent via precipitation technique (PT). As-synthesized NPs phase clarity was confirmed with the help of powder X-ray diffraction (P-XRD), and the calculated crystallite size was found to be ∼1.2 nm (±0.1) using by Scherer method. The optical band gap (Eg) values were depicted by UV–Visible...
Source: Materials Science in Semiconductor Processing - June 4, 2019 Category: Materials Science Source Type: research

Acetaldehyde sensing properties using ultrafine CuO nanoparticles
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Pramila Patil, Umesh T. Nakate, Yogesh T. Nakate, Revan C. AmbareAbstractUniform and ultrafine CuO nanoparticles were prepared via an easy chemical route. This CuO material was utilized to fabricate a p-type semiconductor sensor device for high performance acetaldehyde sensing properties. The crystal structure and molecular structural fingerprint of CuO were revealed via X-ray diffraction data and Raman spectrum analysis respectively. Morphological studies of CuO were carried out using field emission scanning electron ...
Source: Materials Science in Semiconductor Processing - June 4, 2019 Category: Materials Science Source Type: research

The effect of alpha particle irradiation on electrical properties and defects of ZnO thin films prepared by sol-gel spin coating
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): M.E.I. Ahmed, F. Taghizadeh, F.D. Auret, W.E. Meyer, J.M. NelAbstractZnO thin films were prepared using the sol-gel spin coating technique. The structure was investigated using X-ray diffraction (XRD). The XRD spectra exhibited typical randomly orientated structure with a slight preference for growth along the (002) plane and a crystallite size of ∼ 48 nm. The Schottky barrier diodes were fabricated on the synthesized ZnO thin films. The electrical properties before and after irradiating the devices with alpha pa...
Source: Materials Science in Semiconductor Processing - June 4, 2019 Category: Materials Science Source Type: research

The growth of Bi2Te3 topological insulator films: Physical vapor transport vs molecular beam epitaxy
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): O. Concepción, V.M. Pereira, A. Choa, S.G. Altendorf, A. Escobosa, O. de MeloAbstractBi2Te3 topological insulator thin films have been obtained by several techniques. For future applications in spintronics or quantum computing high quality homogenous films with few defects and impurities are required. Molecular beam epitaxy has been widely used for the growth of these materials, however, this technique operates in ultra-high vacuum conditions which significantly increases its cost. In this work, the use of the p...
Source: Materials Science in Semiconductor Processing - June 2, 2019 Category: Materials Science Source Type: research

Bottom-contact organic thin film transistors with transparent Ga-doped ZnO source-drain electrodes
In this study, transparent Ga-doped ZnO (GZO) films grown by magnetron sputtering were used as the source-drain (S-D) electrodes of bottom-contact organic field effect transistors (OTFTs). The GZO films exhibited good transmittance (beyond 80 %) in the visible region and the work functions of GZO films were found to be gradually increased with increasing the annealing temperature from 500 to 700 °C, leading to the reduction of contact barriers and improvement of device performances. OTFT fabricated by GZO S-D electrodes exhibited higher field-effect mobility of 0.0101 cm2/Vs and threshold voltage of −7.7 V when...
Source: Materials Science in Semiconductor Processing - June 1, 2019 Category: Materials Science Source Type: research

The effect of deposition cycles on intrinsic and electrochemical properties of metallic cobalt sulfide by Simple chemical route
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Kester O. Ighodalo, Blessing N. Ezealigo, A. Agbogu, Assumpta C. Nwanya, Daniel Obi, Sylvester L. Mammah, S. Botha, R. Bucher, Malik Maaza, Fabian I. EzemaAbstractIn this paper, cobalt sulfide thin film was synthesized on glass and steel substrates via chemical route. The structure, surface morphology, and optical characterization of the deposited thin films indicated a strong relationship between the number of deposition cycles and intrinsic properties. The scanning electron microscope (SEM) showed a uniform morpholog...
Source: Materials Science in Semiconductor Processing - May 30, 2019 Category: Materials Science Source Type: research

The effect of indium doping concentration on structural, morphological and gas sensing properties of IZO thin films deposited SILAR method
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Baktiyar Soltabayev, Memet Ali Yıldırım, Aytunç Ateş, Selim AcarAbstractIn-doped ZnO thin films with 0%,1%, 3%, 5% and 7% In were deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method on glass substrates for nitric oxide (NO) gas sensing application. X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive X-ray analysis (EDAX) were used to evaluate the effect of In doping concentrations on properties of the films. The XRD study clearly shows the existence of the...
Source: Materials Science in Semiconductor Processing - May 30, 2019 Category: Materials Science Source Type: research

Non-vacuum synthesis of CZTS by sulphurization of electrochemically layered zinc and tin on copper
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): E. Indubala, N. Sneha, V. Sudha, S. HarinipriyaAbstractSequential layering of Zn and Sn on Cu foil by electrolysis of appropriate salt solution is carried out. The layered metals are annealed at 350 °C to form Cu-Zn-Sn alloy. To the alloy, 30 g of (excess) elemental sulphur powder is added and sulphurized at 350°, 450°, 550° and 650 °C. Structural, morphological, optical and electrochemical investigations revealed CZTS as favourable phase at all sulphurization temperatures. Electrochemical Imp...
Source: Materials Science in Semiconductor Processing - May 30, 2019 Category: Materials Science Source Type: research

Electrical, optical and surface characterization of reactive RF magnetron sputtered molybdenum oxide films for solar cell applications
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Haris Mehmood, Gence Bektaş, İlker Yıldız, Tauseef Tauqeer, Hisham Nasser, Raşit TuranAbstractThin films of molybdenum oxide (MoOx) were fabricated by radio frequency (RF) reactive magnetron sputtering technique with various oxygen flow rates and the deposition pressure fixed at 4 mTorr. The stoichiometry, composition, chemical binding energy, electrical, and optical properties of the sputtered MoOx films were examined. The deposited films were characterised by x-ray photoelectron spectroscopy (XPS), capacitance-v...
Source: Materials Science in Semiconductor Processing - May 30, 2019 Category: Materials Science Source Type: research

Facile construction of Co3O4 porous microspheres with enhanced acetone gas sensing performances
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Jing Cao, Shuangming Wang, Haiming Zhang, Tong ZhangAbstractLarge-scale and well-dispersed Co3O4 porous microspheres have been successfully synthesized by a room temperature solution approach followed by the calcination treatment in air. Microstructural characterizations by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) show that as-prepared Co3O4 microspheres with diameters of 800–950 nm are assembled by numerous nanoparticles and present loose p...
Source: Materials Science in Semiconductor Processing - May 29, 2019 Category: Materials Science Source Type: research

Molecular dynamics study on femtosecond laser aided machining of monocrystalline silicon carbide
Publication date: October 2019Source: Materials Science in Semiconductor Processing, Volume 101Author(s): Binbin Meng, Dandan Yuan, Jian Zheng, Shaolin XuAbstractTo solve SiC machining processes problems such as low processing efficiency, surface/subsurface damage, and machining tool wear, a femtosecond-laser-aided machining process was studied. In this paper, the diamond-machinability and removal mechanism of SiC-modified layer during femtosecond-laser-aided machining process are evaluated at the nanoscale using molecular dynamics. The results show that micro/nano structures in the modified layer significantly influence t...
Source: Materials Science in Semiconductor Processing - May 29, 2019 Category: Materials Science Source Type: research

Controllable fabrication and field emission properties of cactus-like Cu2-xSe@Cu2-xSe nanowalls via the vertical secondary growth
Publication date: September 2019Source: Materials Science in Semiconductor Processing, Volume 100Author(s): Xin Hou, Pei Xie, Lingwei Li, Shaolin Xue, Hange Feng, Zhiyuan Liu, Jibin Gong, Xiaofan Wei, Yinchu Gong, Rujia ZouAbstractThe cactus-like Cu2-xSe@Cu2-xSe nanowalls was prepared by secondary growth method using Cu2-xSe nanowalls as substrate. This special nanostructure comprises Cu2-xSe nano spines neatly growing on the sharp edges of Cu2-xSe nanowalls. Reaction time has a powerful effect on the formation and morphologies of Cu2-xSe nanowalls. XRD analysis indicated the cubic berzelianite phase of Cu2-xSe. The cactus...
Source: Materials Science in Semiconductor Processing - May 24, 2019 Category: Materials Science Source Type: research

Metal droplet formation and motion during the III-V semiconductor evaporation
Publication date: September 2019Source: Materials Science in Semiconductor Processing, Volume 100Author(s): A.A. Spirina, N.L. ShwartzAbstractThe process of metal droplet formation and motion during a high-temperature annealing under the Langmuir evaporation conditions is studied by Monte Carlo simulation. The nanosized droplet motion mechanism during a high-temperature annealing is suggested. The reason for the droplet motion is the lateral drop-crystal interface dissolution in a liquid metal. The movement direction is determined by the difference in the (111)A and (111)B crystal facet dissolution rates. The step movement...
Source: Materials Science in Semiconductor Processing - May 24, 2019 Category: Materials Science Source Type: research

Nanofluids flow driven by peristaltic pumping in occurrence of magnetohydrodynamics and thermal radiation
Publication date: September 2019Source: Materials Science in Semiconductor Processing, Volume 100Author(s): J. Prakash, E.P. Siva, D. Tripathi, M. KothandapaniAbstractA mathematical model is presented to study the nanofluids flow driven by peristalsis mechanisms through asymmetric channel. The electrically-conducting nature of the nanofluid demands magnetohydrodynamic effects. Governing equations contain the fluxed consequences of Brownian motion and thermophoretic dispersion of nanoparticles. To examine the thermal radiation effects, a thermal radiative flux model is also deployed. A lubrication approach is employed to si...
Source: Materials Science in Semiconductor Processing - May 23, 2019 Category: Materials Science Source Type: research

Synergetic antibacterial and anticarcinogenic effects of Annona squamosa leaf extract mediated silver nano particles
Publication date: September 2019Source: Materials Science in Semiconductor Processing, Volume 100Author(s): Lakshmi Kalyani Ruddaraju, Panduranga Naga Vijay Kumar Pallela, S.V.N. Pammi, Veerabhadra Swamy Padavala, Venkata Ramana Murthy KolapalliAbstractThe present investigation deals with the antibiotic potentiation and antitumor activity of green processed Ag NPs. Silver nanoparticles were prepared using Annona squamosa (AS) leaf extract as a potent bio-reducer and stabilizer. An intense surface plasmon resonance (SPR) band around 430 nm indicates the formation of well-stabilized silver nano particles, which was conform...
Source: Materials Science in Semiconductor Processing - May 23, 2019 Category: Materials Science Source Type: research

Design and synthesis of Mo2C/MoO3 with enhanced visible-light photocatalytic performance for reduction of Cr (VI) and degradation of organic pollutants
In this study, a facile impregnation-calcination strategy was applied in order to synthesize Mo2C modified MoO3 (Mo2C/MoO3), which was then employed as catalyst for the photoreduction of Cr (VI) and photodegradation of methyl orange (MO) upon irradiation by visible light (λ > 400 nm). The apparent rate constant (k) of Mo2C/MoO3 for the MO photocatalyzed degradation reaction under visible-light irradiation was found to be 0.0171 min-1, which was 4.59 and 67.38 times higher than that of Pt/MoO3 and pristine MoO3, respectively. Study of the photocatalytic mechanism revealed that the •O2- species played a ...
Source: Materials Science in Semiconductor Processing - May 23, 2019 Category: Materials Science Source Type: research

Comprehensive photoresponse study on high performance and flexible π-SnS photodetector with near-infrared response
Publication date: September 2019Source: Materials Science in Semiconductor Processing, Volume 100Author(s): Mohamed S. Mahdi, Naser M. Ahmed, A. Hmood, K. Ibrahim, M. BououdinaAbstractTin sulfide (SnS) has attracted a great interest recently due to its high absorption coefficient (∼104 cm−1), facile deposition and low-cost. This research work consists on a comprehensive photoresponse investigation of flexible π-SnS photodetector analyzed under illumination of near-infrared (NIR). The π-SnS film has been deposited onto a flexible substrate polyethylene terephthalate (PET) via facile and relatively low-cost...
Source: Materials Science in Semiconductor Processing - May 23, 2019 Category: Materials Science Source Type: research

Individual CdS-covered aerographite microtubes for room temperature VOC sensing with high selectivity
Publication date: September 2019Source: Materials Science in Semiconductor Processing, Volume 100Author(s): Lidia Ghimpu, Oleg Lupan, Vasile Postica, Julian Strobel, Lorenz Kienle, Maik-Ivo Terasa, Mona Mintken, Ion Tiginyanu, Janik Marx, Bodo Fiedler, Rainer AdelungAbstractThe synthesis of new nanomaterials with a large surface-to-volume ratio is of high interest for sensing applications, and especially for gas sensors with high performances. In this work, a thin layer of CdS is deposited onto tubular graphitic/aerographite microstructures using RF magnetron sputtering for further integration into sensing devices using a ...
Source: Materials Science in Semiconductor Processing - May 23, 2019 Category: Materials Science Source Type: research

Sharply-precipitated spherical assembly of ZnO nanosheets for low temperature H2S gas sensing performances
We report the room-temperature preparation of ZnO nanostructures and their gas sensing properties. Nanosheet-constructed ZnO spheres were chemically precipitated in a surfactant-free alkaline solution in just a few minutes. X-ray diffraction and Raman spectra confirm the wurtzite structure of ZnO. Electron microscopy observations reveal the nanosheets having {101¯0} facets are grown in the [0001] direction. The nanosheets are formed as a result of the lateral oriented attachment of paralleled nanorods through edge sharing. The electronic band gap of ZnO is determined to be 3.37 eV from the band edge optical absorpti...
Source: Materials Science in Semiconductor Processing - May 23, 2019 Category: Materials Science Source Type: research

Ultra-high phosphorus-doped epitaxial Ge layers grown by HWCVD method on Si substrates
Publication date: September 2019Source: Materials Science in Semiconductor Processing, Volume 100Author(s): Vladimir Shengurov, Sergei Denisov, Vadim Chalkov, Vladimir Trushin, Andrei Zaitsev, Dmitry Prokhorov, Dmitry Filatov, Anton Zdoroveishchev, Mikhail Ved, Alexey Kudrin, Mikhail Dorokhin, Yuri BuzyninAbstractThe conditions for obtaining high-quality heavily doped epitaxial Ge:P/Si(001) epitaxial layers by hot wire chemical vapor deposition were determined. The thermal decomposition of GaP was employed to provide the source of P. Extremely high electron concentration in Ge layers (up to 1.3×1020 cm−3) wer...
Source: Materials Science in Semiconductor Processing - May 21, 2019 Category: Materials Science Source Type: research

Synthesis of stable and highly oxygen deficient V2O5 thin films for physical functionalization of nanofiltration membranes
Publication date: September 2019Source: Materials Science in Semiconductor Processing, Volume 100Author(s): S.R. Indhumathi, M. Manoj Cristopher, P. Karthick, M. Dhivya Pushpa, B. Poornima, C. Gopalakrishnan, K. JeyadheepanAbstractFunctionalization of nanofiltration membranes by physical modification of the membrane surface is the challenging field of research to enhance the stability of the membrane by reducing the membrane fouling. Herein, stable vanadium pentoxide (V2O5) thin films, deposited by using the nebulizer spray pyrolysis technique by varying the precursor concentration, were reported for the application of the...
Source: Materials Science in Semiconductor Processing - May 21, 2019 Category: Materials Science Source Type: research

Low-cost and nontoxic highly rectifying diodes using p-type tin monosulfide (SnS) thin films and Ti/Au binary contacts
Publication date: September 2019Source: Materials Science in Semiconductor Processing, Volume 100Author(s): Koteeswara Reddy Nandanapalli, Devika Mudusu, Gunasekhar K. ReddyAbstractEco-friendly and efficient rectifying p-n diodes have been developed by using cost-effective and non-toxic tin monosulfide (SnS) thin films. Chemically stoichiometric tin monosulfide (SnS) thin films followed by titanium/gold (Ti/Au) bilayer contacts were deposited on Si substrates and then, the structures were treated by rapid thermal annealing process (RTP) at different temperatures. The impact of RTP treatment on the surface morphology and ch...
Source: Materials Science in Semiconductor Processing - May 21, 2019 Category: Materials Science Source Type: research

Plasma-induced damage and annealing repairing in ALD-Al2O3/PECVD-SiNx stacks
Publication date: September 2019Source: Materials Science in Semiconductor Processing, Volume 100Author(s): Shizheng Li, Ning Yang, Xiao Yuan, Xiaojun Ye, Liangxing Wang, Fei Zheng, Cui Liu, Hongbo LiAbstractWe study the effect of plasma-enhanced chemical vapor deposition (PECVD) SiNx process to atomic layer deposited (ALD) Al2O3 films on crystalline silicon surface passivation. The plasma-induced damage on Al2O3 films is affected by the methods of PECVD process (direct or microwave), and the states (as-deposited or annealed) and the thickness of ALD-Al2O3 films. The passivation degradation may be related to the doping of ...
Source: Materials Science in Semiconductor Processing - May 21, 2019 Category: Materials Science Source Type: research

Reheating induced atomic migration in Al-doped ZnO (AZO) films: Effect on the growth of AZO/ZnO bilayer
Publication date: September 2019Source: Materials Science in Semiconductor Processing, Volume 100Author(s): Narendra Bandaru, Emila PandaAbstractIn this work, reheating-induced transition in Al, Zn and O atomic positions in Al-doped ZnO (AZO) thin films is reported, and its application is shown for the growth of AZO/ZnO bilayers. Here thickening ZnO films were deposited on the AZO-coated soda lime glass (SLG) substrates by adopting two different fabrication routes. In the first process, ZnO film was deposited on the AZO-coated SLG substrate for appropriate duration immediately after the deposition of the AZO layer, whereas...
Source: Materials Science in Semiconductor Processing - May 21, 2019 Category: Materials Science Source Type: research