Nanoscale Imaging and Control of Volatile and Non ‐Volatile Resistive Switching in VO2

Herein, in opernado X ‐ray nanoimaging is used to follow the evolution of the nanostructure and defect concentration in Mott insulator VO2 during an electrically driven transition. By temporarily inducing the crystal lattice disorder, the switching response of individual nanodomains between volatile and persistent modalities is reversibly modified. This is an important step toward emulating neurons and synapses in a neuromorphic implementation. AbstractControl of the metal ‐insulator phase transition is vital for emerging neuromorphic and memristive technologies. The ability to alter the electrically driven transition between volatile and non‐volatile states is particularly important for quantum‐materials‐based emulation of neurons and synapses. The major chal lenge of this implementation is to understand and control the nanoscale mechanisms behind these two fundamental switching modalities. Here, in situ X‐ray nanoimaging is used to follow the evolution of the nanostructure and disorder in the archetypal Mott insulator VO2 during an electrically driven transition. Our  findings demonstrate selective and reversible stabilization of either the insulating or metallic phases achieved by manipulating the defect concentration. This mechanism enables us to alter the local switching response between volatile and persistent regimes and demonstrates a new possibility for nanoscale control of the resistive switching in Mott materials.

Source: Small - November 23, 2020 Category: Nanotechnology Authors: Anatoly G. Shabalin, Javier Valle, Nelson Hua, Mathew J. Cherukara, Martin V. Holt, Ivan K. Schuller, Oleg G. Shpyrko Tags: Communication Source Type: research