Controllable fabrication and field emission properties of cactus-like Cu2-xSe@Cu2-xSe nanowalls via the vertical secondary growth

Publication date: September 2019Source: Materials Science in Semiconductor Processing, Volume 100Author(s): Xin Hou, Pei Xie, Lingwei Li, Shaolin Xue, Hange Feng, Zhiyuan Liu, Jibin Gong, Xiaofan Wei, Yinchu Gong, Rujia ZouAbstractThe cactus-like Cu2-xSe@Cu2-xSe nanowalls was prepared by secondary growth method using Cu2-xSe nanowalls as substrate. This special nanostructure comprises Cu2-xSe nano spines neatly growing on the sharp edges of Cu2-xSe nanowalls. Reaction time has a powerful effect on the formation and morphologies of Cu2-xSe nanowalls. XRD analysis indicated the cubic berzelianite phase of Cu2-xSe. The cactus-like Cu2-xSe@Cu2-xSe nanowalls presents a better field electron emission performance than the first synthesized Cu2-xSe nanowalls, possessing the turn-on field 2.04 V/μm and the enhancement factor of 5181. The formation mechanism of cactus-like Cu2-xSe@Cu2-xSe nanowalls was discussed and proposed. The results indicated that the cactus-like Cu2-xSe@Cu2-xSe nanowalls can be used as a promising material in field emission applications.
Source: Materials Science in Semiconductor Processing - Category: Materials Science Source Type: research