Metal droplet formation and motion during the III-V semiconductor evaporation

Publication date: September 2019Source: Materials Science in Semiconductor Processing, Volume 100Author(s): A.A. Spirina, N.L. ShwartzAbstractThe process of metal droplet formation and motion during a high-temperature annealing under the Langmuir evaporation conditions is studied by Monte Carlo simulation. The nanosized droplet motion mechanism during a high-temperature annealing is suggested. The reason for the droplet motion is the lateral drop-crystal interface dissolution in a liquid metal. The movement direction is determined by the difference in the (111)A and (111)B crystal facet dissolution rates. The step movement deceleration near the droplet can be a cause of step bunching.
Source: Materials Science in Semiconductor Processing - Category: Materials Science Source Type: research