Effect of oxidation on intrinsic residual stress in amorphous silicon carbide films.

Effect of oxidation on intrinsic residual stress in amorphous silicon carbide films. J Biomed Mater Res B Appl Biomater. 2018 Oct 15;: Authors: Deku F, Mohammed S, Joshi-Imre A, Maeng J, Danda V, Gardner TJ, Cogan SF Abstract The change in residual stress in plasma enhanced chemical vapor deposition amorphous silicon carbide (a-SiC:H) films exposed to air and wet ambient environments is investigated. A close relationship between stress change and deposition condition is identified from mechanical and chemical characterization of a-SiC:H films. Evidence of amorphous silicon carbide films reacting with oxygen and water vapor in the ambient environment are presented. The effect of deposition parameters on oxidation and stress variation in a-SiC:H film is studied. It is found that the films deposited at low temperature or power are susceptible to oxidation and undergo a notable increase in compressive stress over time. Furthermore, the films deposited at sufficiently high temperature (≥325 C) and power density (≥0.2 W cm-2 ) do not exhibit pronounced oxidation or temporal stress variation. These results serve as the basis for developing amorphous silicon carbide based dielectric encapsulation for implantable medical devices. © 2018 Wiley Periodicals, Inc. J Biomed Mater Res B Part B: 2018. PMID: 30321479 [PubMed - as supplied by publisher]
Source: Biomed Res - Category: Research Authors: Tags: J Biomed Mater Res B Appl Biomater Source Type: research