Thermochromic Cs2AgBiBr6 Single Crystal with Decreased Band Gap through Order ‐Disorder Transition

This work shows a thermochromic strategy to decrease the band gap of Cs2AgBiBr6 by approximately 0.36  eV, obtaining the smallest reported band gap of 1.69 eV under ambient conditions. The high annealing temperature leads to an order to partially disorder the transition of Ag and Bi atoms at the B-site, which broadens the band edge and decreases the band gap. AbstractLead-free Cs2AgBiBr6 double perovskite is considered to be a promising alternative to the traditional lead-based analogues due to its long carrier lifetime, high structural stability, and non-toxicity. However, the large band gap limits its absorption of visible light, which is not conducive to further optoelectronic applications. Herein, a thermochromic strategy is reported to decrease the band gap of Cs2AgBiBr6 by approximately 0.36  eV, obtaining the smallest reported band gap of 1.69 eV under ambient conditions. The experimental data indicate that after annealing the Cs2AgBiBr6 single crystals at 400  °C, the silver (Ag) and bismuth (Bi) atoms occupy the B-site in a random way and form a partially disordered configuration. The formation of the antisite defects broadens the band edges and decreases the band gap. This work offers new insights into the preparation of narrow band gap lead-free dou ble perovskites, and a deep understanding of their structural and electronic properties for further development in photoelectric devices.
Source: Small - Category: Nanotechnology Authors: Tags: Research Article Source Type: research