Interface mechanisms involved in a-IGZO based dual gate ISFET pH sensor using Al2O3 as the top gate dielectric

Publication date: 15 November 2020Source: Materials Science in Semiconductor Processing, Volume 119Author(s): Narendra Kumar, Deepa Bhatt, Moitri Sutradhar, Siddhartha Panda

Source: Materials Science in Semiconductor Processing - July 3, 2020 Category: Materials Science Source Type: research