Growth characteristics of Fe-doped GaN epilayers on SiC (001) substrates and their effects on high breakdown voltage devices

Publication date: 15 November 2020Source: Materials Science in Semiconductor Processing, Volume 119Author(s): Kai-Ping Chang, Po-Jung Lin, Ray-Hua Horng, Dong-Sing Wuu

Source: Materials Science in Semiconductor Processing - June 15, 2020 Category: Materials Science Source Type: research