Surface analysis, gate leakage currents and electrical characteristics of Mn ions incorporated into ZrO2 gate dielectric layer in silicon MOS capacitors

Publication date: 15 November 2020Source: Materials Science in Semiconductor Processing, Volume 119Author(s): J. Udaya Bhanu, P. Thangadurai

Source: Materials Science in Semiconductor Processing - June 6, 2020 Category: Materials Science Source Type: research