Temperature dependent current- and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering technique

Publication date: 1 November 2020Source: Materials Science in Semiconductor Processing, Volume 118Author(s): A. Baltakesmez, S. Tekmen, B. Güzeldir
Source: Materials Science in Semiconductor Processing - Category: Materials Science Source Type: research