Understanding the conduction and switching mechanism of Ti/AlOx/TaOx/Pt analog memristor

Publication date: Available online 7 August 2019Source: Physics Letters AAuthor(s): Sen Liu, Yi Sun, Bing Song, Zhiwei Li, Haijun Liu, Qingjiang LiAbstractIn this letter, the conduction and bipolar switching mechanism of the ultrathin AlOx(3 nm)/TaOx(5 nm) memristor are investigated through the electrical characterization and elemental analysis. The AlOx/TaOx memristor exhibits high uniformity and excellent analog property after initial reset process. The following experiments and analyses demonstrate that the switching behavior could take place over the whole area of TaOx/Pt interface and is dominated by the tunneling barrier modulation induced by oxygen ions migration.

Source: Physics Letters A - August 9, 2019 Category: Physics Source Type: research