Silicon Radical ‐Induced CH4 Dissociation for Uniform Graphene Coating on Silica Surface (Small 16/2024)

Graphene FrameworksIn article number2306325, Zheng-Ze Pan, Devis Di Tommaso, Hirotomo Nishihara, and co-workers tackle the surface inertness of SiO2 on graphene coating over chemical vapor deposition via the pre-grafting of trimethyl silane (TMS) groups on the pristine SiO2 surface. TMS-grafted SiO2 facilitates the graphene growth via the in-situ formed Si radicals that catalyze CH4 dissociation. This provides insights on the graphene growth chemistries, promoting the synthesis of tailored graphene-based materials.

Source: Small - April 18, 2024 Category: Nanotechnology Authors: Kritin Pirabul, Qi Zhao, Zheng ‐Ze Pan, Hongyu Liu, Mutsuhiro Itoh, Kenichi Izawa, Makoto Kawai, Rachel Crespo‐Otero, Devis Di Tommaso, Hirotomo Nishihara Tags: Frontispiece Source Type: research