Comparative Simulation Study of InGaN and Silicon Channel Stack Oxide Twin Gate Field Effect Transistor Based Ammonia Gas Sensor

AbstractThis work reports a comparative analysis between Indium Gallium Nitride (InGaN) channel stack oxide twin gate field effect transistor (SO-TG-FET) and Silicon (Si) channel stack oxide twin gate field effect transistor for the detection of ammonia (NH3) gas. Catalytic metal gate of Cobalt (Co) with stacking of SiO2/HfO2 is used to detect presence of NH3.The interaction of ammonia gas molecules with Co metal gate of SO-TG-FET causes a remarkable variation in the sensitivity parameters like drain current (OFF and ON), surface potential, threshold voltage, switching ratio and transconductance. The OFF current sensitivity (SIOFF) and threshold voltage sensitivity (SVTH) of the proposed NH3 gas sensor has also has been analysed at different value of work function of Cobalt metal gate. The performance of the device has been evaluated under ambient conditions both in presence and absence of ammonia gas at room temperature. Results obtained from the simulation of SO-TG-FET NH3 gas sensor reveal that the device with InGaN channel material has 117% and 226% greater OFF current sensitivity and switching ratio (at\(\Delta {\phi }_{Metal}\)=250  meV) respectively than the device with Silicon channel. The contour plot shows that the concentration of charge carrier is 18% higher in Indium Gallium Nitride channel based ammonia gas sensor as compared to the Silicon channel NH3 gas sensor, which results in enhanced sensitivity. Additionally, in order to investigate the stability of prop...
Source: Sensing and Imaging - Category: Biomedical Engineering Source Type: research