Molecules, Vol. 29, Pages 1723: Copper(I) Iodide Thin Films: Deposition Methods and Hole-Transporting Performance

Molecules, Vol. 29, Pages 1723: Copper(I) Iodide Thin Films: Deposition Methods and Hole-Transporting Performance Molecules doi: 10.3390/molecules29081723 Authors: Mahboubeh Jamshidi James M. Gardner The pursuit of p-type semiconductors has garnered considerable attention in academia and industry. Among the potential candidates, copper iodide (CuI) stands out as a highly promising p-type material due to its conductivity, cost-effectiveness, and low environmental impact. CuI can be employed to create thin films with >80% transparency within the visible range (400–750 nm) and utilizing various low-temperature, scalable deposition techniques. This review summarizes the deposition techniques for CuI as a hole-transport material and their performance in perovskite solar cells, thin-film transistors, and light-emitting diodes using diverse processing methods. The preparation methods of making thin films are divided into two categories: wet and neat methods. The advancements in CuI as a hole-transporting material and interface engineering techniques hold promising implications for the continued development of such devices.
Source: Molecules - Category: Chemistry Authors: Tags: Review Source Type: research