Low-frequency noise limitations of InAsSb-, and HgCdTe-based infrared detectors

Publication date: Available online 19 February 2020Source: Sensors and Actuators A: PhysicalAuthor(s): Łukasz Ciura, Małgorzata Kopytko, Piotr MartyniukAbstractThe 1/f noise in midwavelength InAsSb- and HgCdTe-based unipolar barrier infrared detectors, grown on GaAs substrate, are studied both experimentally and theoretically. The examination of the dark current reveals three current components: leakage, diffusion, and generation-recombination. The first dominates in the low-temperature region for all devices, while diffusion and generation-recombination components dominate in the high-temperature region. For InAsSb-based detectors with cut-off wavelength 5.6 μm at 230 K, the measured 1/f noise can be exclusively attributed to the leakage current (which has the surface origin), which means that noise coefficients (relative noise) of generation-recombination and diffusion currents are small with respect to the leakage-current induced 1/f noise. In the HgCdTe-based barrier detector with cut-off wavelength 3.6 μm at 230 K, all current components induce measurable 1/f noise, but the leakage current is effectively suppressed, consequently, 1/f noise connected with generation-recombination and diffusion currents can be isolated. For this detector, the relative 1/f noise of generation-recombination and diffusion current decrease versus temperature with an exponential manner but the relations between 1/f noise coefficients, observed for InAsSb-based devices, hold true. Then, ...

Source: Sensors and Actuators A: Physical - February 20, 2020 Category: Physics Source Type: research