[ASAP] Robust Impact-Ionization Field-Effect Transistor Based on Nanoscale Vertical Graphene/Black Phosphorus/Indium Selenide Heterostructures

ACS NanoDOI: 10.1021/acsnano.9b06140

Source: ACS Nano - December 30, 2019 Category: Nanotechnology Authors: Anyuan Gao, Zhiyi Zhang, Lingfei Li, Binjie Zheng, Chenyu Wang, Yaojia Wang, Tianjun Cao, Yu Wang, Shi-Jun Liang, Feng Miao*, Yi Shi*, and Xiaomu Wang* Source Type: research