Effect of La-doping on dielectric properties and energy storage density of lead-free Ba(Ti0.95Sn0.05)O3 ceramics

Publication date: Available online 20 November 2019Source: Materials Research BulletinAuthor(s): R. Kumar, I. Singh, R. Meena, K. Asokan, Balaji Birajdar, S. PatnaikAbstractLead-free Ba1−zLazTi0.95Sn0.05O3 with z=0.00, 0.015, 0.025, and 0.035 samples were prepared using solid-state reaction route. X-ray diffraction measurement reveals the single phase formation of ceramic samples. Scanning electron microscopy shows the inhibited grain growth (≤0.5 μm) at low La-doping while the higher La-doping in BTS ceramics yielded the larger grain size (2.5 μm). Raman spectra indicate the substitution of La at Ba site sublattice. Dielectric properties improved with La-doping in BTS ceramic samples. 3.5LBTS sample exhibits energy storage density as high as (Jd) ∼ 0.492 J/cm3 with an energy efficiency of 63% at ∼40 kV/cm, which is 5.5 times more than that of pure BTS ceramics. Such significant increment in energy storage density could be attributed to reduced grain size due to La-doping. Thus, the selected composition could be a new method for enhancing the energy storage density for device applications.Graphical abstract
Source: Materials Research Bulletin - Category: Materials Science Source Type: research