[ASAP] Gate-Induced Metal –Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors

ACS NanoDOI: 10.1021/acsnano.9b06846

Source: ACS Nano - November 5, 2019 Category: Nanotechnology Authors: Prasanna D. Patil †, Sujoy Ghosh†#, Milinda Wasala†#, Sidong Lei‡§, Robert Vajtai‡, Pulickel M. Ajayan‡, Arindam Ghosh??, and Saikat Talapatra*† Source Type: research