Interface Defects  Dependent on Perovskite Annealing Temperature for NiOX-Based Inverted CsPbI2Br Perovskite Solar Cells

In this study, a new type of interface defects in NiOX-based CsPbI2Br solar cells is reported. That is the Pb2+ from CsPbI2Br perovskites can diffuse into the lattice of NiOX surface as the annealing temperature of perovskites changes. The diffusion of Pb2+ increases the ratio of Ni3+/Ni2+ on the surface of NiOX, leading to an increase in the density of trap state at the interface between NiOX and perovskites, which eventually results in a serious decline in the photovoltaic performance of solar cells.PMID:38487956 | DOI:10.1002/cssc.202301722
Source: ChemSusChem - Category: Chemistry Authors: Source Type: research
More News: Chemistry | Organic | Study