Effect of subsurface damages in seed crystals on the crystal quality of 4H-SiC single crystals grown by the PVT technology

This study focuses on the generation and transformation of defects associated with subsurface damages (SSDs) in seed crystals during the physical vapor transport (PVT) growth of 4H-SiC crystals. To cite this article before page numbers are assigned, use the DOI form of citation above. The content of this RSS Feed (c) The Royal Society of Chemistry

Source: RSC - CrystEngComm latest articles - January 24, 2024 Category: Chemistry Authors: Guofeng Li Source Type: research