ROHM ' s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices

Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds on the order of nanoseconds (ns), ideal for high-speed switching. This was facilitated through a…#santaclara #kyoto #rohmsemiconductor #bd2311nvx #ic #gan #iot #lidar #rohm #ecogan
Source: Reuters: Health - Category: Consumer Health News Source Type: news