[ASAP] From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE
Crystal Growth& DesignDOI: 10.1021/acs.cgd.3c00316
Source: Crystal Growth and Design - Category: Chemistry Authors: Nicholas Morgan, Vladimir G. Dubrovskii, Ann-Kristin Stief, Didem Dede, Marie Sangle ́-Ferrière, Alok Rudra, Valerio Piazza, and Anna Fontcuberta i Morral Source Type: research
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