Sensors, Vol. 19, Pages 4386: InGaN as a Substrate for AC Photoelectrochemical Imaging

Sensors, Vol. 19, Pages 4386: InGaN as a Substrate for AC Photoelectrochemical Imaging
Sensors doi: 10.3390/s19204386
Authors:
Bo Zhou
Anirban Das
Menno J. Kappers
Rachel A. Oliver
Colin J. Humphreys
Steffi Krause

AC photoelectrochemical imaging at electrolyte–semiconductor interfaces provides spatially resolved information such as surface potentials, ion concentrations and electrical impedance. In this work, thin films of InGaN/GaN were used successfully for AC photoelectrochemical imaging, and experimentally shown to generate a considerable photocurrent under illumination with a 405 nm modulated diode laser at comparatively high frequencies and low applied DC potentials, making this a promising substrate for bioimaging applications. Linear sweep voltammetry showed negligible dark currents. The imaging capabilities of the sensor substrate were demonstrated with a model system and showed a lateral resolution of 7 microns.

Source: Sensors - October 10, 2019 Category: Biotechnology Authors: Bo Zhou Anirban Das Menno J. Kappers Rachel A. Oliver Colin J. Humphreys Steffi Krause Tags: Article Source Type: research