Band alignment regulation of HfO2/SiC heterojunctions induced by PEALD with in situ NH3-plasma passivation

Publication date: Available online 11 July 2019Source: Physics Letters AAuthor(s): Dawei Xu, Li Zheng, Xinhong Cheng, Gang Wang, Qian Wang, Wenbo Xin, Peiyi Ye, Lingyan Shen, Yuehui YuAbstractThe efficient passivation of in situ NH3-plasma pre-treatment and its regulation of the band alignment between HfO2 and 4H-SiC have been investigated by XPS. With in situ NH3-plasma passivation by PEALD, a VBO of 0.72 eV and a CBO of 1.54 eV can be obtained across the HfO2/4H-SiC interface. The Si-O bonds components reduction in the passivated interface layers will lead to band bending or band shift at the interface and regulate the band alignments between HfO2 and 4H-SiC. The physical mechanism investigation of band alignments can be a cornerstone for the application of HfO2/4H-SiC heterojunctions in the high-power devices.

Source: Physics Letters A - July 12, 2019 Category: Physics Source Type: research