Thermionic-enhanced near-field thermophotovoltaics

We present the theoretical analysis of a device in which photons and electrons travel from a hot LaB6-coated tungsten emitter to a closely spaced BaF2-coated InGaAs photovoltaic cell. Photon tunnelling and space charge removal across the nanoscale vacuum gap produce a drastic increase in flux of electrons and photons, and subsequently, of the generated electrical power density. We show that conversion efficiencies and electrical power densities of ∼ 30% and ∼ 70 W/cm2 are achievable at 2000 K for a practicable gap distance of 100 nm, and thus greatly enhance the performances of stand-alone near-field thermophotovoltaic devices (∼10% and ∼10 W/cm2). A key practical advantage of this nanoscale energy conversion device is the use of grid-less cell designs, eliminating the issue of series resistance and shadowing losses, which are unavoidable in conventional near-field thermophotovoltaic devices.Graphical abstract

Source: Nano Energy - April 16, 2019 Category: Nanotechnology Source Type: research