Tunable electronic properties of an Sb/InSe van der Waals heterostructure by electric field effects

Phys. Chem. Chem. Phys., 2019, Advance Article DOI: 10.1039/C8CP07407K, PaperZhihui Zhang, Yan Zhang, Zifeng Xie, Xing Wei, Tingting Guo, Jibin Fan, Lei Ni, Ye Tian, Jian Liu, Li Duan An Sb/InSe heterostructure manifests a varied direct bandgap under an electric field which is more favorable to FETs and MEMS devices. To cite this article before page numbers are assigned, use the DOI form of citation above. The content of this RSS Feed (c) The Royal Society of Chemistry

Source: RSC - Phys. Chem. Chem. Phys. latest articles - February 22, 2019 Category: Chemistry Authors: Zhihui Zhang Source Type: research