Efficiency enhancement through flat intermediate band in Quantum dot solar cell

Publication date: September 2018Source: Results in Physics, Volume 10Author(s): Ali Imran, Jianliang Jiang, Deborah Eric, Muhammad Noaman Zahid, Muhammad Yousaf, Muhammad Ahmad, Syed Ali HassanAbstractQuantum dots (QD) are playing a vital role due to their multifunctionality such as small size and tuning the range of band and have achieved a considerable attention in the recent decade. In recent research, the efficiency of the solar cell (SC) has greatly been increased by application of QD. If these dots are grown systematically, may lead to the formation of the intermediate band (IB) which leads to the absorption of photons with energy less than the actual band through intermediate absorption process and hence increasing the carrier generation rate which ultimately results in high current density keeping the output voltage unaffected. In this paper, we have proposed a method to control the band flatness of the IB in InAs/GaAs QDSC. The flatness is achieved by optimizing the doping concentration and Fermi level (FL) of the surrounding layers. Results show that the maximum 44.12% efficiency can be achieved under maximum optical intensity.

Source: Results in Physics - July 10, 2018 Category: Physics Source Type: research