High-quality β-(AlxGa1−x)2O3 thin films on sapphire substrates by face-to-face annealing

CrystEngComm, 2024, Advance Article DOI: 10.1039/D4CE00263F, PaperSonghao Wu, Chicheng Ma, Han Yang, Zichun Liu, Yuanxiao Ma, Ran Yao, Yiyun Zhang, Hua Yang, Xiaoyan Yi, Junxi Wang, Yeliang Wang High-quality β-(Al0.68Ga0.32)2O3 (288 arcsec) films have been fabricated through face-to-face annealing on a sapphire substrate which is covered with epitaxial Ga2O3. To cite this article before page numbers are assigned, use the DOI form of citation above. The content of this RSS Feed (c) The Royal Society of Chemistry

Source: RSC - CrystEngComm latest articles - April 25, 2024 Category: Chemistry Authors: Songhao Wu Source Type: research