Deep-ultraviolet n-ZnGa_2O_4/p-GaN heterojunction photodetector fabricated by pulsed laser deposition
Zinc gallium oxide (ZnGa_2O_4) has attracted considerable interest in deep-ultraviolet photodetectors, due to the ultrawide bandgap, high ...
Source: Optics Letters - Category: Physics Authors: Ning Cao Lichun Zhang Xin Li Xianling Meng Doudou Liang Yadan Zhu Fengzhou Zhao Source Type: research