Probing the thermoelectric properties of aluminium-doped copper iodide

Phys. Chem. Chem. Phys., 2024, Advance Article DOI: 10.1039/D4CP00593G, PaperTatavarthi Veera Venkata Ramana, Manjusha Battabyal, Santosh Kumar, Dillip K. Satapathy, Ravi Kumar Al doped CuI exhibit the increase in carrier density, decrease in optical bandgap and phonon life time thus improves the power factor and figure of merit. The maximum PF andZT obtained at 400 K are 79 μW m−1 K−2 and 0.08 for 0.1 mol% Al-doped CuI. To cite this article before page numbers are assigned, use the DOI form of citation above. The content of this RSS Feed (c) The Royal Society of Chemistry

Source: RSC - Phys. Chem. Chem. Phys. latest articles - April 19, 2024 Category: Chemistry Authors: Tatavarthi Veera Venkata Ramana Source Type: research