Lateral GeSn p-i-n photodetectors on insulator prepared by the rapid melting growth method

In this work, GeSn lateral p-i-n photodetectors (PDs) on insulator were fabricated with an active GeSn layer grown by the rapid melting ...

Source: Optics Letters - February 29, 2024 Category: Physics Authors: Qinxing Huang Jun Zheng Yupeng Zhu Xiangquan Liu ZhiPeng Liu Yazhou Yang Jinlai Cui Zhi Liu Yuhua Zuo Buwen Cheng Source Type: research