ZrN films with low resistivity under different chamber pressures by MOCVD

CrystEngComm, 2024, Advance Article DOI: 10.1039/D3CE01273E, PaperQingqing Chen, Chengming Li, Shaoyan Yang, Huijie Li, Yang Rui, Weizhen Yao, Hongyuan Wei, Xianglin Liu ZrN films prepared on Si substrates by MOCVD exhibit superior conductivity and specular reflectivity in the red& near-infrared bands. To cite this article before page numbers are assigned, use the DOI form of citation above. The content of this RSS Feed (c) The Royal Society of Chemistry

Source: RSC - CrystEngComm latest articles - February 27, 2024 Category: Chemistry Authors: Qingqing Chen Source Type: research