Influence of pressure on AlN thick films prepared by epitaxial lateral overgrowth through hydride vapor phase epitaxy

CrystEngComm, 2024, Advance Article DOI: 10.1039/D3CE01300F, PaperMinghao Chen, Chunlei Fang, Qian Zhang, Zhijie Shen, Jianli Ji, Shuxin Tan, Yong Lu, Ting Liu, Jicai Zhang Smooth and crack-free (0002) AlN thick films ( ∼30 μm) were epitaxially grown on trench-patterned AlN/sapphire templates through epitaxial lateral overgrowth (ELO) using hydride vapor phase epitaxy. To cite this article before page numbers are assigned, use the DOI form of citation above. The content of this RSS Feed (c) The Royal Society of Chemistry

Source: RSC - CrystEngComm latest articles - February 20, 2024 Category: Chemistry Authors: Minghao Chen Source Type: research