Optimization of the process parameters for the AlN crystal growth in the PVT method through an improved numerical simulation considering partial pressure of gas phases

CrystEngComm, 2024, Advance Article DOI: 10.1039/D3CE01045G, PaperC. J. Peng, X. G. Yao, X. Y. Miao, S. W. Chen, Q. F. Lu, X. J. Han, D. Shi, Y. L. Shao, Y. Z. Wu, X. P. Hao A novel heat sink at the top of the crucible improves the seed surface growth uniformity by 89%. To cite this article before page numbers are assigned, use the DOI form of citation above. The content of this RSS Feed (c) The Royal Society of Chemistry

Source: RSC - CrystEngComm latest articles - January 26, 2024 Category: Chemistry Authors: C. J. Peng Source Type: research