Effect of subsurface damages in the seed crystal on the crystal quality of 4H-SiC single crystals grown by the PVT technology

CrystEngComm, 2024, Accepted Manuscript DOI: 10.1039/D3CE00984J, PaperGuofeng Li, Wei Hang, Hongyu Chen, Rong Wang, Xiaodong Pi, Deren Yang, Julong Yuan This paper focuses on the generation and transformation of defects associated with subsurface damages (SSDs) in seed crystals during the physical vapor transport (PVT) growth of 4H-SiC crystals. SSDs in... The content of this RSS Feed (c) The Royal Society of Chemistry

Source: RSC - CrystEngComm latest articles - January 12, 2024 Category: Chemistry Authors: Guofeng Li Source Type: research