[ASAP] 100 μm-Cavity GaN-Based Edge Emitting Laser Diodes by the Automatic Cleavage Technique Using GaN-on-Si Epitaxial Lateral Overgrowth

Crystal Growth& DesignDOI: 10.1021/acs.cgd.3c00070

Source: Crystal Growth and Design - April 14, 2023 Category: Chemistry Authors: Yoshinobu Kawaguchi, Kentaro Murakawa, Motohisa Usagawa, Yuuta Aoki, Kazuma Takeuchi, and Takeshi Kamikawa Source Type: research