[ASAP] Unexpected Realization of N ‑Polar AlN Films on Si-Face 4H–SiC Substrates Using RF Sputtering and High-Temperature Annealing

Crystal Growth& DesignDOI: 10.1021/acs.cgd.2c01275

Source: Crystal Growth and Design - March 22, 2023 Category: Chemistry Authors: Ruijie Zhang, Yanan Guo, Tingsong Cai, Zhibin Liu, Naixin Liu, Jianchang Yan, Jinmin Li, and Junxi Wang Source Type: research