Xenon-filled diode performance under influence of low doses of gamma radiation

Appl Radiat Isot. 2022 Mar 18;184:110207. doi: 10.1016/j.apradiso.2022.110207. Online ahead of print.ABSTRACTThis paper presents a detailed statistical analysis of experimental results of dynamic breakdown voltage and electrical breakdown time delay for xenon-filled diode. These quantities have a stochastic nature and they were measured in the cases when the xenon-filled diode was and was not exposed to a gamma radiation source, with exposure dose rate 7.7⋅10-12 C/(kg⋅s). The static breakdown voltage was estimated based on dynamic breakdown voltage as a function of voltage increase rate. The applicability of certain distributions to experimental dynamic breakdown voltage and electrical breakdown time delay data was also analyzed.PMID:35316779 | DOI:10.1016/j.apradiso.2022.110207

Source: Applied Radiation and Isotopes - March 22, 2022 Category: Radiology Authors: Mili ć M Pejović Emilija N Živanović Milan D Stojanovi ć Source Type: research