In Situ Atomic ‐Scale Observation of Monolayer MoS2 Devices under High‐Voltage Biasing via Transmission Electron Microscopy

In this study, the structural evolution of monolayer MoS2 with high bias is revealed via in situ transmission electron microscopy at the atomic scale. The biasing process is recorded and studied with the aid of aberration-corrected scanning transmission electron microscopy. The effects of electron beam irradiation and biasing are also discussed through the combination of experiments and theory. It is found that the Mo nanoclusters result from disintegration of MoS2 and sulfur depletion, which are induced by Joule heating. The thermal stress can also damage the MoS2 layer and form long cracks in both in situ and ex situ biasing cases. Investigation of the results obtained with different applied voltages helps to further verify the mechanism of evolution and provide a comprehensive study of the function of biasing.

Source: Small - January 7, 2022 Category: Nanotechnology Authors: Yi ‐Tang Tseng, Li‐Syuan Lu, Fang‐Chun Shen, Che‐Hung Wang, Hsin‐Ya Sung, Wen‐Hao Chang, Wen‐Wei Wu Tags: Research Article Source Type: research