[ASAP] Ge < sub > 0.95 < /sub > Sn < sub > 0.05 < /sub > Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width

Nano LettersDOI: 10.1021/acs.nanolett.1c00934
Source: Nano Letters - Category: Nanotechnology Authors: Source Type: research
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