[ASAP] Ge < sub > 0.95 < /sub > Sn < sub > 0.05 < /sub > Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width
Nano LettersDOI: 10.1021/acs.nanolett.1c00934
Source: Nano Letters - Category: Nanotechnology Authors: Yuye Kang, Shengqiang Xu, Kaizhen Han, Eugene Y.-J. Kong, Zhigang Song, Sheng Luo, Annie Kumar, Chengkuan Wang, Weijun Fan, Gengchiau Liang, and Xiao Gong Source Type: research
More News: Nanotechnology