Rapid homoepitaxial growth of (010) β-Ga2O3 thin films via mist chemical vapor deposition

Publication date: 15 June 2021Source: Materials Science in Semiconductor Processing, Volume 128Author(s): Hiroyuki Nishinaka, Tatsuji Nagaoka, Yuki Kajita, Masahiro Yoshimoto
Source: Materials Science in Semiconductor Processing - Category: Materials Science Source Type: research