Laser Writable Multifunctional van der Waals Heterostructures

Herein, a facile, fast, and versatile laser direct write micro/nanoprocessing technique is utilized to achieve multifunctional nanoelectronic devices (PN diode, NPN, and PNP bipolar junction transistor (BJT)) simultaneously based on one 2D material heterostructure. The current gain of the BJT can be modulated efficiently by the laser writing tunable base width. AbstractAchieving multifunctional van der Waals nanoelectronic devices on one structure is essential for the integration of 2D materials; however, it involves complex architectural designs and manufacturing processes. Herein, a facile, fast, and versatile laser direct write micro/nanoprocessing to fabricate diode, NPN (PNP) bipolar junction transistor (BJT) simultaneously based on a pre ‐fabricated black phosphorus/molybdenum disulfide heterostructure is demonstrated. The PN junctions exhibit good diode rectification behavior. Due to different carrier concentrations of BP and MoS2, the NPN BJT, with a narrower base width, renders better performance than the PNP BJT. Furthermore, the current gain can be modulated efficiently through laser writing tunable base widthWB, which is consistent with the theoretical results. The maximum gain for NPN and PNP is found to be ≈41 (@WB≈600 nm) and ≈12 (@WB≈600 nm), respectively. In addition, this laser write processing technique also can be utilized to realize multifunctional WSe2/MoS2 heterostructure device. The current work demonstrates a novel, cost ‐effective, and ...
Source: Small - Category: Nanotechnology Authors: Tags: Full Paper Source Type: research