A Robust and Low ‐Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments

A bismuth doped tin oxide memristor with ITO/Bi:SnO2/TiN structure has been fabricated. With the content of 4.8% Bi doping, the self ‐compliance current, switching voltage and operating current of Bi:SnO2 memristor are remarkably smaller than that of ITO/SnO2/TiN device. It is found that the bismuth atoms surround the surface of SnO2 crystals to form the coaxial Bi conductive filament. AbstractMemristor, processing data storage and logic operation all ‐in‐one, is an advanced configuration for next generation computer. In this work, a bismuth doped tin oxide (Bi:SnO2) memristor with ITO/Bi:SnO2/TiN structure has been fabricated. Observing from transmission electron microscope (TEM) for the Bi:SnO2 device, it is found that the bismuth atoms surround the surface of SnO2 crystals to form the coaxial Bi conductive filament. The self ‐compliance current, switching voltage and operating current of Bi:SnO2 memristor are remarkably smaller than that of ITO/SnO2/TiN device. With the content of 4.8% Bi doping, the SET operating power of doped device is 16 µW for ITO/Bi:SnO2/TiN memory cell of 0.4 × 0.4 µm2, which is cut down by two orders of magnitude. Hence, the findings in this study suggest that Bi:SnO2 memristors hold significant potential for application in low power memory and broadening the understanding of existing resistive switching (RS) mechanism.
Source: Small - Category: Nanotechnology Authors: Tags: Full Paper Source Type: research