Impact of 0.9 MeV electron irradiation on main properties of high voltage vertical power 4H-SiC MOSFETs

Publication date: December 2020Source: Radiation Physics and Chemistry, Volume 177Author(s): A.A. Lebedev, V.V. Kozlovski, M.E. Levinshtein, A.E. Ivanov, A.M. Strel'chuk, A.V. Zubov, Leonid Fursin
Source: Radiation Physics and Chemistry - Category: Physics Source Type: research
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