Al0.3Ga0.7N/GaN heterostructure transistors with a regrown p-GaN gate formed with selective-area Si implantation as the regrowth mask

Publication date: October 2020Source: Physica E: Low-dimensional Systems and Nanostructures, Volume 124Author(s): Ming-Lun Lee, Ching-Hua Chen, Jinn-Kong Sheu

Source: Physica E: Low dimensional Systems and Nanostructures - July 17, 2020 Category: Nanotechnology Source Type: research