X-ray diffraction and secondary ion mass spectrometry investigations of GaN films grown on (0 0 1) and (1 1 0) MgF2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE)

Publication date: 15 November 2020Source: Materials Science in Semiconductor Processing, Volume 119Author(s): Kevin Meyer, Martin Buchholz, Daniel Uxa, Lars Dörrer, Harald Schmidt, Daniel M. Schaadt
Source: Materials Science in Semiconductor Processing - Category: Materials Science Source Type: research