Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems

Publication date: Available online 22 February 2020Source: Journal of Alloys and CompoundsAuthor(s): Chandreswar Mahata, Changmin Lee, Youngseo An, Min-Hwi Kim, Suhyun Bang, Chae Soo Kim, Ji-Ho Ryu, Sungjun Kim, Hyoungsub Kim, Byung-Gook ParkAbstractThis work reports on the bipolar resistive switching (RS) characteristics and possible applicability to transparent synaptic devices when an ultrathin Al2O3 interfacial layer is introduced between HfO2 and an indium tin oxide (ITO) bottom electrode for an RS device (TaN/HfO2/Al2O3/ITO). The introduction of the Al2O3 interfacial layer on ITO allows for a more gradual current change during the RESET process. As a result, the bilayer RS device offers multilevel resistance states with reasonable controllability under the application of various DC and pulse voltages. Considering the systematic changes in the resistance in accordance with the negative/positive voltage pulses during the potentiation/depression processes, as well as the reasonable spike-timing-dependent plasticity characteristics, the proposed RS bilayer on ITO is a potential candidate for transparent synaptic devices in neuromorphic systems.
Source: Journal of Alloys and Compounds - Category: Chemistry Source Type: research