Interface trap-induced negative differential resistance in nMOSFET with floating source

Publication date: Available online 19 February 2020Source: Physics Letters AAuthor(s): Haifeng Chen, Hui Nie, Lixin GuoAbstractInterface trap can act as the generation center in device to induce a very weak generation current. We observed the negative differential resistance NDR of this generation current ID in nMOSFET with the floating source. It originates from that the generation function of interface trap is enabled and then is shut down in turn as increasing the drain voltage. This change relies on the interaction among the interface trap energy-level and the electron's Fermi-levels of drain and source under the floating source condition. It is found that the peak-to-valley ratio of ID is beyond 30.

Source: Physics Letters A - February 20, 2020 Category: Physics Source Type: research